Product Specification
| Items | GaN-on-Si | GaN-on-Sapphire |
| 100mm,150mm,200mm,300mm | 50.8mm,100mm,150mm |
| Epi-layer Thickness | <4 μm | <7 μm |
Average Dominant/ Peak Wavelength | 400-420nm 440-460nm 510-530nm | 270-280nm 440-460nm 510-530nm |
| FWHM | <25nm for Blue/Near-UV <45nm for Green | <15nm for UVC <25nm for Blue <40nm for Green |
Wafer Bow | <50 μm | <180 μm |
200mm GaN-on-Si Epiwafer for Micro-LED
Dominant Wavelength Avg: ~450 nm, Std<2 nm | TDD: <1e9 cm-2 | Defect Inspection |
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50.8mm/100mm AlN Template on NPSS/FSS
Items | Remarks |
Description | AlN-on-NPSS template | AlN-on-FSS template |
Wafer diameter | 50.8mm,100mm |
Substrate | c-plane NPSS | c-plane Planar Sapphire (FSS) |
Substrate Thickness | 50.8mm : 430μm 100mm : 650μm |
Thickness of AlN epi-layer | 3~4 μm (target: 3.3μm) |
Conductivity | Insulating |
Surface | As grown |
| Surface | RMS<1nm | RMS<2nm |
Backside | Grinded |
FWHM(002) XRC | < 150 arcsec | < 150 arcsec |
FWHM(102) XRC | < 300 arcsec | < 350 arcsec |
Edge Exclusion | < 2mm | < 3mm |
Primary flat orientation | a-plane±0.1° |
Primary flat length | 50.8mm : 16±1 mm 100mm : 30±1 mm |
Package | Packaged in shipping box or single wafer container |