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Product Specification

ItemsGaN-on-SiGaN-on-Sapphire
100mm,150mm,200mm,300mm50.8mm,100mm,150mm
Epi-layer Thickness<4 μm<7 μm

Average Dominant/

Peak Wavelength

400-420nm

440-460nm

510-530nm

270-280nm

440-460nm 

510-530nm

FWHM

<25nm for Blue/Near-UV

<45nm for Green

<15nm for UVC

<25nm for Blue

<40nm for Green

Wafer Bow

<50 μm

<180 μm

200mm GaN-on-Si Epiwafer for Micro-LED

Dominant Wavelength

Avg: ~450 nm, Std<2 nm

TDD:  <1e9 cm-2

Defect Inspection


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50.8mm/100mm AlN Template on NPSS/FSS

Items

Remarks

Description

AlN-on-NPSS template

AlN-on-FSS template

Wafer diameter

50.8mm,100mm

Substrate

c-plane NPSS

c-plane Planar Sapphire (FSS)

Substrate Thickness

50.8mm : 430μm    100mm : 650μm

Thickness of AlN epi-layer

3~4 μm (target: 3.3μm)  

Conductivity

Insulating

Surface

As grown

Surface

RMS<1nm

RMS<2nm

Backside

Grinded

FWHM(002) XRC

< 150 arcsec

< 150 arcsec

FWHM(102) XRC

< 300 arcsec

< 350 arcsec

Edge Exclusion

< 2mm

< 3mm

Primary flat orientation

a-plane±0.1°

Primary flat length

50.8mm : 16±1 mm       100mm : 30±1 mm

Package

Packaged in shipping box or single wafer container



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